A physically-based C-infinity-continuous model for accumulation-mode SOI pMOSFET's

In this paper, we present a unified accumulation-mode (AM) SOI MOSFET model for circuit simulation. The model is valid in all the regimes of normal operation and includes explicit expressions of the drain current and total charges which have an infinite order of continuity; therefore, smooth transitions are assured. Short channel effects have also been accounted for, We have finally proved that our model accurately fits the transistor characteristics for effective channel lengths down to 0.7-mu m.