A Proposed Ultra-High Frequency Microstrip Utilizing a Buried Silicide Groundplane.

Recently, it has become possible to produce buried single-crystal silicide layers in silicon upon which epitaxial silicon may be grown. We show that if such a layer is used as a groundplane in a microstrip configuration, ultra-high speed signals (e. g., 100 GHz) can be propagated with far less dispersion than on standard microstrip by virtue of the close proximity of the groundplane to the center conductor.