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A prototype multi-wafer silicon molecular beam epitaxy system: Lessons learned (Part I).

10 November 1987

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We evaluate the early performance of a multiple wafer silicon molecular beam epitaxy system. Design goals are compared to actual performance in the areas of vacuum quality, vacuum cycling times, sample transport and ion implantation doping. We note discrepancies and extract recommendations that may be of use in the broader field of ultrahigh vacuum processing equipment.