A review of some of the science and engineering of large diameter Czochralski silicon crystal growth.
01 January 1990
Recent progress in the science and engineering of large diameter Czochralski silicon crystal growth is reviewed. Our understanding of some of the important aspects of crystal growth such as thermal stress, dopant distribution, oxygen incorporation, growth induced defects and micro inhomogeneity is presented. Continuous growth and other non-standard growth techniques are discussed as probable future trends in large diameter crystal growth.