A Robust 11W High efficiency X-band GaInP HBT amplifier
01 January 2007
A monolithic two stages high power, high efficiency and high robustness amplifier was developed for X-band applications. The combination of the improvement of the UMS HBT process called HB20P (GalnP/GaAs) in term of breakdown, the consideration of mismatch and overdrive stability in the design. The MMIC HPA which includes a bias control circuit and a TTL interface in a surface of 18.4 mm2 provides 11 W output power associated to a PAE of about 43% at ambient temperature and can operate at 8 dB compression with an output return loss of 1.7, in a wide temperature range. The high level of performance, the low sensitivity to the environment and the integrated biasing control make of this amplifier an excellent candidate for X band applications such as phased array active antennas.
