A self-consistent Monte Carlo simulator for general semiconductor devices.

An efficient, self-consistent Monte Carlo (MC) simulator has been developed suitable for general silicon devices, including those with regions of high doping/carrier densities. Key features include an original iteration scheme between MC and Poisson's equation and an almost complete vectorization of the program. The simulator has been used to characterize nonequilibrium effects in deep submicron nMOSFETs. Substantial overshoot effects are noticeable at gate lengths of 0.25micron at room temperatures.