A Si BiCMOS Trans-impedance Amplifier for 10Gb SONET Receiver
01 January 2000
A trans-impedance amplifier integrated with an InP PIN photodiode has been demonstrated for 10Gb SONET receiver. The shunt feedback trans-impedance amplifier is fabricated in 0.25microns modular Si BICMOS technology. The feedback resistance of 870 OMEGA is achieved with a bandwidth of 8.5GHz. The sensitivity of the trans-impedance amplifier at 10Gb/s is -17dBm at a bit-error-rate (BER) of 10 sup (-12) with 2 sup (31) -1 pseudo-random bits.