A Si BiCMOS transimpedance amplifier for 10-Gb/s SONET receiver

A transimpedance amplifier packaged with an InP p-i-n photodiode has been demonstrated for 10-Gb/s SONET receiver. The shunt feedback transimpedance amplifier is fabricated in 0.25-μm modular Si BiCMOS technology. The transimpedance of 55 dBΩ is achieved at a bandwidth of 9 GHz by applying shunt peaking and filter termination at the input. The optical sensitivity of -17 dBm was measured at 10 Gb/s for a bit-error rate of 10-12