A Silicon Spacer Self-aligned Contact Bipolar Technology for High Speed Application
08 March 1989
In this paper, we propose a new Silicon Spacer Self-aligned contact bipolar technology. The process sequence is described in detail. The electrical characteristics of the fabricated device are presented.
The new self-alignment scheme is shown to effectively reduce the parasitic capacitances of the bipolar transistor. Therefore, high speed application is promised. The device structure also maintains surface planarity and is very compatible to the CMOS technology for the large scale BiCMOS integration.