A Simple Explanation and Conditions for Persistent Photoconductivity in n-Doped Al sub x Ga sub (1-x) AS.
21 June 1989
New theoretical and experimental data will be presented to show that the persistent photoconductivity (PPC) in n-doped Al sub x Ga sub (1-x) As is related to the conduction band structure of Al sub x Ga sub (1-x) As and the position of the deep donor states attached to the L and X minima. The PPC is sensitive to both x and temperature, and is observed when at 300K the free carriers are shared between GAMMA, L and X valleys, and at the temperature of measurement (T) all the photoexcited carriers are transferred to the GAMMA valley, i.e.0