A Study of Pulsed Laser Planarization of Aluminum for VLSI Metallization.
16 February 1989
The Aluminum flow under various excimer laser fluences and substrate temperatures has been studied systematically. The melting phenomenon, as well as the phenomena of planarization, via-filling, and ablation are reported. The laser (308nm) fluences needed to melt a 0.5microns Al film, to planarize over