A study of the growth of high-purity InGaAs by conventional LPE.
01 January 1984
We report the study of several parameters which affect background impurity levels in In(0.53)Ga(0.47)As layers grown by LPE, on (100) oriented InP substrates. Net carrier concentrations in the 10(14)cm(-3) range and room temperature electron mobilities of 9850 cm(2)V(-1)S(-1) have been obtained reproducibly.