A study of the initial growth kinetics of the copper-aluminum thin film interface reaction by in-situ x-ray diffraction and Rutherford backscattering analysis.
01 January 1984
X-ray diffraction and Rutherford backscattering analysis were used independently to investigate the interface reaction of Cu-Al thin film bilayers during in situ annealing in the temperature range 157-220C. The growth kinetics of the theta-CuAl(2) phase were measured and were found to follow a diffusion limited process.