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    A Sub-0.5micron Bilevel Lithographic Process Using the Deep- UV Electron-Beam Resist P(SI-CMS)

A Sub-0.5micron Bilevel Lithographic Process Using the Deep- UV Electron-Beam Resist P(SI-CMS)

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Optimization of the Deep U.V. lithographic properties of a copolymer of trimethylsilylmethyl methacrylate (SI) and chloromethylstyrene (CMS), P(SI-CMS), within a weight average molecular weight range of 1. 4 to 3.0 x 10 sup 5 and 90 to 93 mole % SI composition has been achieved.