A Submicron Analog CMOS Technology

This paper describes the process and device characteristics of a submicron analog CMOS technology which has been used to fabricate high speed, high performance A/D converters. The technology is a modular enhancement of a fifth generation twin-tub technology developed for digital applications. Devices present in addition to standard n and p channel transistors are a voltage independent double polysilicon capacitor, several types of resistors with sheet resistances from 50 to over 3000 OMEGA/square, and low threshold n and p channel transistors for increased headroom.