A Tb(3+) and (Ce(3+)+Tb(3+)) Activated Y(3)(Al(3)Ga(2)O(12)) Single Crystal Phosphor Grown by Liquid Phase Epitaxy.

Single crystal films of Y(3)(Al(3)Ga(2)O(12)) activated by Tb(3+) and (Ce(3+)+Tb(3+)) were grown by liquid phase epitaxy on Y(3)(Sc(1)Al(4)O(12)) substrates. The cathodoluminescence performance of these films was evaluated at low and high power density excitation regimes. We found the (Y(2.89)Ce(0.01)Tb (0.1))(Al(3)Ga(2)O(12)) broad band green emitting phosphor to be 30% brighter than (Y(2.885)Ce(0.015)Tb(0.1)Al(5)O(12)) at high power density excitation. The green narrow band emitting (Y(2.9)Tb(0.1))(Al(3)Ga(2)O(12)) was found to be 17% brighter than (Y(0.1)Tb(0.2))Lu(2.7)(Al(3.1)Ga(1.9)O(12)), the previous best phosphor of this type. The (Y(2.89)Ce(0.01))Tb(0.1)(Al (3)Ga(2)O(12)) is the best epitaxial film phosphor known to us and (Y(2.9)Tb(0.1))(Al(3)Ga(2)O(12)) attains 80% of this performance. The effects which host film composition changes have upon the interaction of the incident electron beam are then discussed and related to the observed changes in cathodoluminescence of the newly developed single crystal epitaxial film phosphors.