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    A Transmission Electron Microscope Study of Large-Wavelength Modulation Contrast in InGaAsP Layers Epitaxially-Grown on {001} InP Substrates

A Transmission Electron Microscope Study of Large-Wavelength Modulation Contrast in InGaAsP Layers Epitaxially-Grown on {001} InP Substrates

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Spinodal decomposition is known to occur in ternary and quaternary III-V compound semiconductors, including InGaAs and InGaAsP. A transmission electron microscope (TEM) study of these materials grown by liquid phase or vapor phase epitaxy has shown that there are two types of modulation oriented along the directions; fine(100 equivalent to 200 angstrom)-and coarse(equivalent to 2,000 angstrom) -scale modulations.