A wavelength selectable hybrid III-V/Si laser fabricated by a wafer bonding technique

This paper reports on a hybrid III-V on silicon arrayed waveguide grating lasers, fabricated by a wafer bonding technique. The III-V materials provide the gain of the laser and SOI waveguides for wavelength selection using an arrayed waveguidegrating and for reflectors using Bragg gratings. The lasers show a threshold current around 40mA, and a maximum coupled power to a single mode fiber of -2.2 dBm. Moreover independent lasing of 5 wavelength channels spaced by 392 GHz is demonstrated.