Abrupt doping by atomic beams in chemical beam epitaxy.
01 January 1986
The use of chemical beam epitaxy (CBE) instead of chemical vapor deposition (CVD) allows the incorporation of thermal atomic beams for doping. This combination produced ultra- thin and very abrupt dopant profiles similar to those achieved in conventional molecular beam epitaxy (MBE). Dopant profile measurements by differential capacitance (Polaron) technique and secondary ion mass spectroscopy (SIMS) technique show that Si dopant in InP is extremely abrupt at all growth temperatures (