Abstracts of Papers by Bell System Authors Published in Other Journals (01 May 1976)

Abstracts of Papers by Bell System Authors Published in Other Journals CHEMISTRY Dielectric Anisotropy in Amorphous Ta 2 0 8 Films. P. W. Wyatt, J. Electrochem. Soc., 122 (December 1975), pp. 1660-1666. The capacitance of Ta-Ta 2 0 6 thinfilm capacitors varies in an asymmetric way with dc electric field. 

This asymmetry suggests that an interface effect might be involved, but measurements with different oxide thicknesses show that at low temperature the interfaces are not the cause. Therefore, the asymmetry must be due to anisotropy in the bulk oxide, which is surprising in view of its amorphous structure. The Diffusion of Ion-Implanted Arsenic in Silicon. R. B. Fair and J. C. C. Tsai, J. Electrochem. Soc., 122 (December 1975), pp. 1689-1696. Secondary ion mass spectrometry and differential conductivity measurements of implanted-diffused As layers in Si nave been performed to study the diffusion and electrical quality of these layers. 

The effects of diffusion ambient and surface pile-up of As are discussed. Osmium Dioxide Trifluoride 0 s 0 2 F 3 : Synthesis and Some Properties. W. E. Falconer, F. J. DiSalvo, J. E. Griffiths, F. A. Stevie, W. A. Sunder, and M. J. Vasile, J. Fluorine Chem., 6 (December 1975), pp. 499-520. Osmium dioxide trifluoride, 0S0 2 FJ, has been synthesized for the first time. The yellow-green substance is isomorphous with one phase of OSOJF2, and a fluorine-bridged polymeric system is likely. The free molecule is polar, and disproportionates readily at temperatures required to obtain its mass spectrum.