Abstracts of Papers by Bell System Authors Published in Other Journals (01 October 1976)

A Comparison of Chemical Etches for Revealing (100) Silicon Crystal Defects. D. G. Schimmel, J. Electrochem. Soc., 123, No. 5 (May 1976), pp. 734-741. Etch pit results of the Sirtl, Dash, Secco, and an experimental etch are compared for (100) silicon wafers after various device processing steps. Factors influencing etchpit formation on silicon surfaces are discussed. A recommendation is given for the etch formation with the best etch-pit development. 

Fabrication and Performance of Offset-Mask Charge-Coupled Devices. A.M. Mohsen and T. F. Retajczyk, Jr., IEEE J. Solid State Circuits, SC-11 (February 1976), pp. 180-188. The use of the offset-mask technique to fabricate two-phase and uniphase charge-coupled device (CCD) electrode structures is described. A new two-phase electrode structure with polysilicon-electrodes and self-aligned gates for the peripheral circuits has been developed. The polysilicon offset-mask electrode structure is very attractive for charge-coupled memories. 

Compared to other twopolysilicon level CCD structures, it has a higher packing density, is more tolerant to intralevel shorts, and does not require large numbers of small contact windows to connect the gate electrodes to the phase bus lines. High Repetition-Rate and Quasi-CW Operation of a Waveguide C0 2 TE Laser. P. W. Smith, C. R. Adams, P. J. Maloney, and O. R. Wood II, Opt. Commun., 16, No. 1 (January 1976), pp. 50-53. We report operation of a waveguide C0 2 TE laser at excitation pulse repetition frequencies as high as 40 kHz.