Activation and Deactivation of Implanted B in Si
02 August 1999
The temporal evolution of the electrically active B fraction has been measured experimentally on B implanted Si, and calculated using atomistic simulation. An implant of 40 keV, 2x10 sup (14) cm sup (-2) B was examined during a post-implant anneal at 800C. The results show a low B activation (~25%) for short anneal times (