Activation of Implanted Poly Gates by Short Cycle Time Annealing

Amporphous silicon films with B, P, and As implants were activated with thermal anneals that include spiking to the maximum temperature. Films were grown over thermal oxide by chemical vapor deposition as two separately implanted 50-nm layers for manipulating dopant placement and diffusion. Electrical activation was determined by Hall van der Pauw and MOS C-V, and dopant diffusion was profiled by SIMS. Flat-band voltage was used to benchmark relative thermal budgets for p-type poly. Temperature-time relationships are used to deduce effective activation energies.