Activation Volume for Antimony Diffusion in Silicon and Implications for Strained Films

The diffusivity of Sb in Si is retarded by pressure, characterized at 860C by an activation volume of V*=(+0.03+-0.01) OMEGA, where OMEGA is the atomic volume. V* is close to values inferred from atomistic calculations for a vacancy mechanism. Our experimental results for hydrostatic pressure are used to make predictions for the effect of biaxial strain on Sb diffusion. The results are in quantitative agreement with the experimental results of Kringhoj et al for Sb diffusion in biaxially strained Si and Si-Ge films. This work lends additional support to the predominance of the vacancy mechanism for Sb diffusion and demonstrates the first steps in the development of a capability for predicting the effect of nonhydrostatic stress on diffusion.