Adaptive Grid Generation for Semiconductor Device Simulation
03 June 1990
As IC technology is scaled, the complexity involved in device geometries and physical operation necessitates sophisticated grid-generation techniques to achieve accurate and efficient simulations. It is essential - particularly in 3D - that the generation process be automatic, controlled only by parameters related to solution accuracy. In this work, a methodology for adaptive grid generation in semiconductor device simulation is developed, suitable for arbitrary spatial dimension and geometries.