Admittance Measurements at Epitaxial Silicide Schottky Contacts

The Schottky barrier at a metal-semiconductor contact is thought to be strongly influenced by charged interface states. These states may either be caused by exponentially decaying metal wavefunctions or by structural defects. The electrical characterization of interface states is therefore expected to yield a better insight into the physics of Schottky contacts. The capacitance for contacts with an interfacial layer has been explained within a consistent model for the capture/emission processes at the interface.