Advanced Amorphous Dielectrics for Embedded Capacitors
01 January 1999
A new class of embedded capacitors based on amorphous binary and ternary metal oxides with high dielectric constant materials will be presented that can be integrated into the backend metal layers of a circuit. Amorphous dielectrics have many advantages over crystalline materials with higher dielectric constants including a low processing temperatures and scalability. The metal oxide systems that have been investigated include alloys of tantalum oxide and titanium oxide. Applications for capacitors with these materials include embedded DRAM memory cells, precision capacitors for analog circuits and power supply capacitors.