Advanced Short-Time Thermal Processing for Si Based CMOS Devices

This paper will focus on RTP application for metallization annealing. It is clear that the role of nitride is quite complex, and a control of optical and electronic properties of the device requires a detailed knowledge of various mechanisms that influence optical parameters, interface charge, and transport of H [6,7]. In this paper, we will present our current understanding of these mechanisms and describe a systematic process sequence for optimization of solar cell performance. In a multifunction process such as this, temperature nonuniformities can have strong influence on the device performance. We will discuss the various emissivity models and compensating schemes to minimize the effects of temperature non-uniformity across the wafer.