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    Aluminum Interconnects Encapsulated with CVD Tungsten (NOT KNOWN IF PUBLISHED BECAUSE AUTHOR HAS LEFT AT&T)

Aluminum Interconnects Encapsulated with CVD Tungsten (NOT KNOWN IF PUBLISHED BECAUSE AUTHOR HAS LEFT AT&T)

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A bilayer metallization is presented in which tungsten selectively deposited by CVD covers all exposed aluminum surfaces. Patterned aluminum runners uniformly encapsulated by this method exhibit improved metal step coverage in windows. Applications presented here include both single and multilevel metal VLSI circuits.