(AlxGa1-x)(0.5)In0.5P/In0.15Ga0.85As (x = 0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications
01 December 2001
The quaternary (AlxGa1-x)(0.5)In0.5P(0 less than or equal to x less than or equal to 1) compounds on GaAs substrates are important materials used as a Schottky layer in microwave devices. In this report, we systematically investigated the electrical properties of quaternary (AlxGa1-x)(0.5)In0.5P materials and concluded that the best composition for improving the device performance is by substituting 30% (x = 0.3) of Ga atoms for Al atoms in GaInP material. The Schottky barrier heights (phi(B)) of (AlxGa1-x)(0.5)In0.5P layers were 0.85 similar to 1.00 eV. We successfully realized the (AlxGa1-x)(0.5)In0.5P/In0.15Ga0.85As (x = 0, 0.3, 1.0) doped-channel FETs (DCFETs) and demonstrated excellent dc, microwave, and power characteristics.