Amorphization of Si(001) by Ultra Low Energy (0.5 to 5 keV) Ion Implantation Observed with High Resolution RBS
01 January 1999
The process of amorphizaton of Si(001) by ultra low energy (0.5 keV B sup + and 5 keV si sup +) ion implantation is investigated using high-resolution RBS/channeling with depth resolution better than 1 nm. In contrast to observations at higher implantation energies, amorphization by the ultra low energy ion implantation appears to proceed from the SiO sub 2/c-Si interface. The threshold dose for amorphization is determined to be ~ 1 x 10 sup (15) cm sup (-2) for 0.5 keV B sup + and ~ 1.5 x 10 sup (14) cm sup (-2) keV Si sup +. Comparison of the experimental results with TRIM simulation suggests that the SiO sub 2/c-Si interface behaves as a nucleation site for amorphization.