Amorphous Si, Relaxation, Laser Annealing and Other FOM Stories
10 October 1989
The ability to epitaxially crystallize amorphous Si at low temperatures with ion beams has opened up some new dimensions in interface and segregation behavior. We will review our measurements of interface motion induced by MeV heavy ion irradiation in the temperature range 200-500C. The impurities Cu, Ag and Au have high diffusivities and solubilities in amorphous Si and demonstrate classic segregation phenomena at the moving interface.