An analysis of dislocation reduction in the LEC growth of <111> InP by impurity hardening.

We have established that the practical approach of excessive impurity additions, widely used to eliminate dislocations in the LEC growth of InP, is in complete accord with the quasi- steady state heat transfer/thermal stress model of dislocation generation. A previous prediction based on this model relating the reduction in dislocation density to a decrease in the ambient temperature gradient has been experimentally confirmed in the case of both GaAs and InP. However, a detailed analysis of impurity hardening in suppressing dislocation formation was postponed until now due to the lack of some essential property values.