An associative memory based on an Electronic Neural Network Architecture.

A new type of parallel-processing associative memory was made using analog amplifiers interconnected through a matrix of amorphous silicon resistors. The 22 X 22 resistor matrix was made using a technology compatible with conventional VLSI processing. This demonstration circuit can recall up to four 22-bit memories in 1 to 10 microseconds while correcting error in the input word of at least 5 bits. This function is difficult to perform efficiently in conventional digital hardware and is the basis for solving a variety of pattern recognition problems including vision and speech.