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    An Evaluation of Two Circuit-Level MOSFET Models as Applied to Depletion-Mode Buried-Channel Devices Based on Physical Device Simulation

An Evaluation of Two Circuit-Level MOSFET Models as Applied to Depletion-Mode Buried-Channel Devices Based on Physical Device Simulation

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The buried-channel (BC) MOSFET has been investigated as one possible alternative MOS transistor for VLSI applications that might avoid some of the limitations encountered in conventional surface-channel (SC) MOSFETs.