An High Performance, Directly Insertable Ultra-rad Hard and Enhanced Isolation Field-Oxide Technology for Submicron CMOS VLSI

In integrated circuits, field-oxides are used for the isolation of active devices. In small geometry high performance radiation-tolerant CMOS/NMOS, the parasitic field-oxide transistor leakage can be fatal for the circuit operation. We have invented a new field-oxide structure for Rad- Hard CMOS VLSI. This is a three layer structure consisting of a thin thermal oxide, a doped polysilicon sheet deposited on the thin oxide and a thick CVD oxide layer deposited on the polysilicon.