An improved substrate current model for deep submicron MOSFETs
01 November 2000
An improved substrate current model for deep submicron MOSFETs, suitable for circuit aging simulation, is developed. The present model predictions are compared with experimental data and the BSIM3V3 model. A good agreement between the present model predictions and experimental data is obtained. (C) 2000 Elsevier Science Ltd. All rights reserved.