An Input Amplitude Modulated Harmonic Outphasing PA

In this paper, an outphasing power amplifier (PA) made using 2x30W GaN HEMTs and operated in deep class-C bias is presented. The design methodology along with some practical design aspects is also considered. The paper reports a working novel operational concept of outphasing with unmatched combiner, showing a potential to deliver more than 40% drain efficiency at 10 dB Power Back Off (PBO).