An Integrated InP/InGaAs Heterojunction Bipolar Photoreceiver.
01 January 1988
We report the first integrated photodetector-preamplifier circuit implemented with InP/InGaAs heterojuction bipolar transistors. The circuit consists of a three-terminal phototransistor, three bipolar transistors, and three resistors. A receiver sensitivity of -26 dBm at 100 Mbit/s has been achieved.