An investigation of Type 4A molecular sieves for the pretreatment of arsine used in a hydride VPE reactor.

InGaAs samples have been grown by hydride VPE both with and without Type 4A molecular sieves in the arsine feed line. The samples have been characterized using Polaron electrochemical profiler measurements and Hall effect measurements. No significant differences in either background carrier concentrations or mobilities have observed. It is concluded that Type 4A molecular sieves are not effective in removing dopant impurities from 4% arsine-hydrogen mixture used.