An N-Channel BICFET in the GaAs/AlGaAs Material System.
01 January 1989
An N-channel BICFET has been fabricated in GaAs/AlGaAs MBE grown material, with the charge sheet situated in the wide band gap semiconductor. This has shown a gain of 5 at current densities of 1.2 x 10 sup 4 A/cm sup 2. HFET output characteristics in the same structure verify the inversion channel operation of the BICFET.