An n-channel BICFET in the InGaAs/InAlGaAs/InAlAs Material System
01 January 1989
An n-channel BICFET is demonstrated for the first time in the InGaAs/InAlGaAs/InAlAs Material System, achieving a current gain in a large area device of greater than 900. The device structure utilizes a self-aligned refractory emitter contact and high temperature processing and still obtains an ideality factor of 1.2 for the source input diode.