An Overview of III-V Technology

We report microwave S-parameter measurements and equivalent- circuit modeling of In sub (0.53) Ga sub (0.47) As/In sub (0.52) Al sub (0.48) As/InP SISFETs of 1.1microns gate length. The devices incorporated wide-bandgap buffers, self-aligned contact implants, and refractory airbridge gates. Their dc I - V characteristics displayed sharp pinchoff, good output conductance of 10-20 mS/mm, and extrinsic transconductance up to 220 mS/mm at room temperature.