Analysis of the gate-voltage-dependent series resistance of MOSFET's.
01 January 1986
The series resistance which occurs near the channel end of a MOSFET is analyzed. This new model includes the effects due to the unavoidable doping gradient near the metallurgical junction. It is shown that both the spreading (injection) resistance and accumulation layer resistance are gate-voltage dependent. More importantly, they are shown to be a strong function of the steepness of the doping profile. The model quantitatively predicts these resistance components for a given process, and it emphasizes the necessity for a steep junction profile in order to minimize the series resistance of MOSFET's.