Angle-Resolved Photoemission of Cobalt on Si(111)7X7

An important aspect of understanding epitaxy of CoSi sub 2 on silicon is the description of the electronic structure of the CoSi sub 2 -Si interface and of thin CoSi sub 2 layers. In order to better understand these properties, angle resolved photoemission with synchrotron radiation (at Brookhaven, NSLS, U4A) has been used to study the valence-band electronic structure of cobalt on the Si(111) 7X7 surface. Cobalt was deposited in situ at 3X10 sup -10 torr form a MBE-type source with shutter and liquid-nitrogen shroud.