Angular Resolved Surface-Plasmon Loss from Si(111) Surfaces

Increased surface carrier concentration were detected from B-doped Si(111) surfaces by measuring the dispersion of plasmon-loss peaks with angle resolved HREELS. The surface-plasmon energy loss due to bulk doping concentrations is usually too small to detect; however, enhancement of the carrier concentration at the surface during sample preparation of p-type Si(111)7x7 caused an easily detected energy loss when our resolution was 8 meV.