Annealing behavior of Ga sup + implanted GaAs/AlGaAs observed by conventional transmission electron microscopy.

The structural aspects and annealing behavior of induced damage by Ga sup + ion implantation of a GaAs single quantrum well are investigated by transmission electron microscopy. After Rapid Thermal Annealing vacancy and interstitial perfect dislocation loops are found on and type planes. High dislocation loop densities are found in the AlGaAs barrier and GaAs quantum well. Saturation of the implantation enhanced interdiffusion of the quantum well, as observed previously, is shown to correspond to the leveling off of the dislocation loop density.