Anomalous C-V characteristics of implanted poly MOS structure in N+/P+ dual-gate CMOS technology.
01 January 1989
An anomalous C-V characteristics of implanted silicide/poly gate MOS structure fabricated in low processing temperature N+/P+ - gate CMOS process has been reported. Based on the extensive studies on many possible causes, a physical model has been proposed. The correlation and its impact on device performance is demonstrated.