Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon
27 May 2013
An oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells on Si showing an atomic-plane-thick reconstruction across the InP-Si interface and no degradation of the quantum wells luminescence is demonstrated. Several InP surface preparation procedures have been investigated to ensure an oxide-free bonding. Such a bonding procedure without oxide or metal mediation allows embedding very-high-index-contrast nanostructuration within optic and optoelectronic integrated devices, thus enabling tailored designs enhancing dedicated optical functions. Heteroepitaxial bonding is also similarly obtained on nanopatterned Si surface. (C) 2013 AIP Publishing LLC.