Atomic Scale Oxidation of a Complex System O sub 2 /alpha-SiC (0001) 3x3
07 May 2001
The atomic scale oxidation of the alpha-SiC(0001)3x3 surface is investigated by atom-resolved scanning tunneling microscopy, synchrotron-based core level photoemission spectroscopy and high-sensitivity infrared absorption spectroscopy. The results reveal that the initial oxidation takes place through the relaxation of lower layers, away from the surface dangling bond, in sharp contrast to silicon oxidation.